Publications in 2025

• Kazuki Shimazoe, Masashi Kato, and Hiroyuki Nishinaka,
  "Rutile-Structured GeO2 Thin Films Grown on Various Planes of α-Al2O3 Substrates with Graded GexSn1–xO2 Buffer Layers",
  ACS Applied Electronic Materials (2025) (in press) DOI:https://doi.org/10.1021/acsaelm.5c01935
  
  
• Kazuki Shimazoe, Ichiro Seike, Kazutaka Kanegae and Hiroyuki Nishinaka,
  "Enhanced growth temperature window and Sb doping of rutile GeO2 enabled by graded buffer layers",
  Japanese Journal of Applied Physics 64, 050903 (2025) DOI: https://doi.org/10.35848/1347-4065/add2b4
  
  
• Kazukata Kanegae, Kazuki Shimazoe, Ichiro Seike, and Hiroyuki Nishinaka,
  "Ni/rutile GeO2 vertical Schottky barrier diode on Nb-doped TiO2 substrate using Sb-doped graded GeySn1-yO2 buffer layers",
  Applied Physics Express 18, 041001 (2025) DOI: 10.35848/1882-0786/adc3e8
  
  
• "Suppression of the degradation in SiC power devices using high-energy ion implantation"
  Masashi Kato, Shunta Harada, Hitoshi Sakane,
  JSAP Review, 2025, Volume 2025, Released on J-STAGE December 17, 2025, Online ISSN 2437-0061, https://doi.org/10.11470/jsaprev.250424
  
  
• SiCの製造・加工技術 ～結晶成長・加工プロセス技術と各種課題への対応～
  加藤　正史（共著, 範囲： 第4章第1節第1項　第5章第4節第4項）
  （株）情報機構 2025年12月 in Japanese
  
  
• "Suppression of stacking faults expansion by backside proton implantation into SiC substrates"
  Tong Li, Hitoshi Sakane, Shunta Harada, Masashi Kato,
  Materials Science in Semiconductor Processing 203, 110262 (2026). https://doi.org/10.1016/j.mssp.2025.110262
  
  
• 「高エネルギーイオン注入によるSiCパワーデバイス劣化抑制」
  　加藤 正史, 原田 俊太, 坂根 仁　
  応用物理94巻 11号 598-601頁 https://doi.org/10.11470/oubutsu.94.11_598
  
  
• "Auger recombination coefficient in heavily nitrogen-doped 4H-SiC under high-level injection conditions"
  Endong Zhang, Hiroko Matsuyama and Masashi Kato,
  Appl. Phys. Express 18, 091001 (2025). https://doi.org/10.35848/1882-0786/adfef4
  
  
• "Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation"
  Hitesh Jayaprakash, Constantin Csato, Masashi Kato, Tong Li, Florian Krippendorf, Michael Rueb,
  Solid State Phenomena (Volume 375), pp. 13-20, 2025. https://doi.org/10.4028/p-kLR0jq
  
  
• "Difference between the Si- and C-faces in channeling Al ion implantation along the direction in 4H-SiC”
  Masashi Kato,
  Japanese Journal of Applied Physics 64, 088002 (2025) https://doi.org/10.35848/1347-4065/adf7f5
  
  
• "Focused light birefringence for three-dimensional observation of dislocations in silicon carbide wafers"
  Masashi Kato, Hisaya Sato, Tomohisa Kato, Koichi Murata, Shunta Harada,
  Review of Scientific Instruments 96, 083901 (2025). https://doi.org/10.1063/5.0184548
  
  
• 高エネルギーイオン注入を用いた欠陥制御による SiC パワーデバイス劣化抑制
  原田俊太、坂根　仁、加藤正史、
  まてりあ第64巻7号p.455 (2025).　 https://doi.org/10.2320/materia.64.455
  
  
• "Bulk and surface recombination of carriers in SiC and related wide band gap semiconductor materials"
  Masashi Kato,
  Japanese Journal of Applied Physics 64, 060101 (2025). https://doi.org/10.35848/1347-4065/adda80
  
  
• "Hydrogen and point defect introduction into 4H-SiC by plasma treatment"
  Tong Li, Hitoshi Sakane, Shunta Harada, Yasuyoshi Kurokawa and Masashi Kato,
  Japanese Journal of Applied Physics 64, 051003 (2025). 10.35848/1347-4065/add6f7
  
  
• "Investigating surface recombination velocity and bulk carrier lifetime in lithium tantalate using micro-photoconductance decay techniques"
  Ntumba Lobo, Liu Huan Xiu, Endong Zhang, and Masashi Kato,
  Chemical Physics Letters 2025, 869, 142061 https://doi.org/10.1016/j.cplett.2025.142061
  
  
• "Observation of point defect and carrier lifetime distributions in hydrogen or helium ion implanted SiC PiN diodes for suppression of bipolar degradation"
  Masashi Kato, Tong Li, Hitoshi Sakane and Shunta Harada,
  Japanese Journal of Applied Physics 64, 010901 (2025). 10.35848/1347-4065/ad9fc3