Publications in 2024

• ペロブスカイト太陽電池の開発動向と特性改善 -発電効率向上、長寿命化、耐久性改善 –
  加藤　正史（共著, 範囲： 第８章　評価技術　第2節 マイクロ波光導電減衰法と時間分解フォトルミネセンス法を用いたペロブスカイト材料のキャリア寿命の測定）
  （株）技術情報協会 2024年12月 in Japanese
  
  
• "Controlled Domain in 3C-SiC Epitaxial Growth on Off-Oriented 4H-SiC Substrates for Improvement of Photocathode Performance"
  Kongshik Rho, Jun Fujita and Masashi Kato,
  ECS Journal of Solid State Science and Technology 13, 125002 (2024). 10.1149/2162-8777/ad9e7a_
  
  
• パワーデバイスの最新開発動向と高温対策および利用技術
  加藤　正史（ 担当： 共著 , 範囲： 第2章、第3節　SiCパワーデバイスの高性能化・高信頼化）
  （株）R&D支援センター 2024年11月 in Japanese
  
  
• "Charge carrier recombination in TiO2 and SrTiO3 single crystals: Impact of CoOx cocatalyst loading"
  Endong Zhang, Toru Takayoshi, Zhenhua Pan, and Masashi Kato,
  Journal of Applied Physics, 136, 205303 (2024)　https://doi.org/10.1063/5.0234709
  
  
• "Suppression of stacking-fault expansion in 4H-SiC diodes by helium implantation"
  Tong Li, Hitoshi Sakane, Shunta Harada and Masashi Kato,
  Applied Physics Express 17, 086503 (2024). 10.35848/1882-0786/ad6be5
  
  
• "Aluminum channeling in 4H-SiC by high-energy implantation above 10 MeV"
  Manuel Belanche, Yoshiyuki Yonezawa, Rene Heller, Arnold Muller, Christof Vockenhuber, Corinna Martinella, Michael Rub, Masashi Kato, Koichi Murata, Hidekazu Tsuchida, Koji Nakayama, Ulrike Grossner,
  Materials Science in Semiconductor Processing, 179 (2024) 108461. https://doi.org/10.1016/j.mssp.2024.108461
  
  
• "Analysis of defects dominating carrier recombination in CeO2 single crystal for photocatalytic applications"
  Endong Zhang, Christoph J Brabec and Masashi Kato,
  Journal of Physics D: Applied Physics 57 (2024) 305104. 10.1088/1361-6463/ad42ac
  
  
• "Photoelectrical characterization of heavily-doped p-SiC Schottky contacts"
  Hiroki Imabayashi, Hitose Sawazaki, Haruto Yoshimura, Masashi Kato, and Kenji Shiojima,
  Japanese Journal of Applied Physics 63, 04SP71 (2024) https://doi.org/10.35848/1347-4065/ad32e0
  
  
• "Effects of proton implantation into 4H-SiC substrate: Stacking faults in epilayer on the substrate"
  Masashi Kato, Ohga Watanabe, Shunta Harada, Hitoshi Sakane,
  Materials Science in Semiconductor Processing 175 (2024) 108264 https://doi.org/10.1016/j.mssp.2024.108264
  
  
• "Mitigation of carrier trapping effects on carrier lifetime measurements with continuous-wave laser illumination for Pb-based metal halide perovskite materials"
  Ntumba Lobo, Gebhard J. Matt, Andres Osvet, Shreetu Shrestha, Andrii Kanak, Petro Fochuk, Christoph J. Brabec, and Masashi Kato,
  Journal of Applied Physics 135, 074905 (2024); doi: 10.1063/5.0181654
  
  
• "Effect of dislocations on carrier recombination and photoelectrochemical activity in polished and unpolished TiO2 and SrTiO3 crystals"
  Endong Zhang, Mingxin Zhang, Masashi Kato,
  Journal of Applied Physics 135, 045102 (2024); doi: 10.1063/5.0181625
  
  
• "Effects of proton implantation for expansion of basal plane dislocations in SiC toward suppression of bipolar degradation: review and perspective"
  Masashi Kato, Shunta Harada, Hitoshi Sakane,
  Japanese Journal of Applied Physics 63, 020804 (2024). https://doi.org/10.35848/1347-4065/ad1779
  
  
• "Carrier recombination in highly Al doped 4H-SiC: dependence on the injection conditions"
  Kazuhiro Tanaka, Masashi Kato,
  Japanese Journal of Applied Physics 63, 011002 (2024). 10.35848/1347-4065/ad160c