Publications in 2023
  • "Unravelling material properties of halide perovskites by combined microwave photoconductivity and time-resolved photoluminescence spectroscopy"
    Christian Kupfer, Vincent M. Le Corre, Chaohui Li, Larry Luer, Karen Forberich, Masashi Kato, Andres Osvet and Christoph J. Brabec.
    Journal of Materials Chemistry C,
    https://doi.org/10.1039/D3TC03867J

  • "Surface recombination velocities for 4H–SiC: Dependence of excited carrier concentration and surface passivation"
    Masashi Kato, Ayato Ogawa, Lei Han, Tomohisa Kato,
    Materials Science in Semiconductor Processing 170, 107980

  • "Analysis of carrier recombination coefficients of 3C-and 6H-SiC: Insights into recombination mechanisms in stacking faults of 4H-SiC"
    Kazuhiro Tanaka, and Masashi Kato,
    AIP Advances 13, 085220 (2023).
    https://doi.org/10.1063/5.0157696

  • "Development of an angle detection system for channeling implantation to the c-axis of SiC using birefringence phenomenon"
    Masashi Kato, Takumi Maruhashi, Hisaya Sato, and Yoshiyuki Yonezawa,
    Japanese Journal of Applied Physics 62, 068003 (2023)
    https://doi.org/10.35848/1347-4065/acdcd8

  • "Suppression of partial dislocation glide motion during contraction of stacking faults in SiC epitaxial layers by hydrogen ion implantation"
    Shunta Harada, Hitoshi Sakane, Toshiki Mii, Masashi Kato,
    Applied Physics Express 16, 021001 (2023).
    https://doi.org/10.35848/1882-0786/acb585

  • "Effects of ion implantation process on defect distribution in SiC SJ-MOSFET"
    Takuya Fukui, Tatsuya Ishii, Takeshi Tawara, Kensuke Takenaka, Masashi Kato,
    Japanese Journal of Applied Physics 62, 016508 (2023).
    https://doi.org/10.35848/1347-4065/acb0a2

  • "4H-SiC Auger recombination coefficient under the high injection condition"
    Kazuhiro Tanaka, Keisuke Nagaya and Masashi Kato,
    Japanese Journal of Applied Physics 62, SC1017 (2023).
    https://doi.org/10.35848/1347-4065/acaca8