Publications in 2013
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(in Japanese)
オドンボリル、森口、市村
光化学堆積SnO2薄膜を用いた携帯式水素検出器の試作
電気学会論文誌A、Vol. 133, pp.28-29 (2013).
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Y. Song and M. Ichimura,
H2O2 treatment of electrochemically deposited Cu2O thin films for enhancing
optical absorption
Int. J. Photoenergy, Vol.2013, 738063 (2013).
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F. Rahman, J. Podder, and M. Ichimura
Structural, Optical, and Electrical Characterization of Spray Pyrolysed
Indium Sulfide Thin Films
Surface Review and Letters, Vol. 20, 1350014 (2013).
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M. Kato, M. Kimura, and M. Ichimura
Leakage Current Suppression by Passivation of Defects by Anodic Oxidation of
4H-SiC Schottky Contacts
Jpn. J. Appl. Phys., 52, 04CP02, (2013).
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A. Fukuda and M. Ichimura
Heterostructure Solar Cells Based on Sol-Gel Deposited SnO2 and
Electrochemically Deposited Cu2O
Mater. Sci. Appl. Vol.4, No.6A, pp.1-4 (2013).
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Wujisiguleng Bao and M. Ichimura
Band Offsets at the ZnO/Cu2ZnSnS4 Interface Based on the First Principles
Calculation
Jpn. J. Appl. Phys., Vol.52, 061203 (2013).
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M. Ichimura and Y. Kato
Fabrication of TiO2/Cu2O heterojunction solar cells by electrophoretic
deposition and electrodeposition
Mater. Sci. Semicond. Processing, Vol. 16, pp.1538–1541 (2013).
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J. J. M. Vequizo and M. Ichimura
Electrodeposition of Ga-O Thin Films from Aqueous Gallium Sulfate Solutions
Jpn. J. Appl. Phys., Vol.52, 075503 (2013).
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M. Kato, A. Yoshida, M. Ichimura, H. Nagasawa
Excess carrier lifetime and strain distributions in a 3C-SiC wafer grown on
an undulant Si substrate
Physica Status Solidi A 210, pp.1719–1725 (2013).
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M. Ichimura, H. Sakakibara, K. Wada, and M. Kato
Efficiency of a solar cell with intermediate energy levels: An example study
on hydrogen implanted Si solar cells
J. Appl. Phys. Vol.114, 114505 (2013).
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J. J. M. Vequizo and M. Ichimura
Electrodeposition and Characterization of γ-FeOOH Thin Films from
Oxygen-Bubbled Aqueous Iron Sulfate Solutions
Appl. Phys. Express Vol.6, 125501 (2013).
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T. Hyodo, G. Asakura, K. Tsukada, and M. Kato
Performance improvement of the analog ANC circuit for a duct by insertion of an all-pass filter
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Vol.E96-A No.4 (2013) pp.824-825
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Kazuki YOSHIHARA, Masashi KATO, Masaya ICHIMURA, Tomoaki HATAYAMA, Takeshi OHSHIMA
Deep levels in p-type 4H-SiC induced by low-energy electron irradiation
Materials Science Forum Vols. 740-742 (2013) pp. 373-376.
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Tomonari Yasuda, Masashi Kato, Masaya Ichimura, Tomoaki Hatayama
Solar-to-hydrogen conversion efficiency of water photolysis with epitaxially grown p-type SiC
Materials Science Forum Vols. 740-742 (2013) pp. 859-862.
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(in Japanese)
加藤 正史(分担執筆)
「書籍「薄膜の評価技術ハンドブック」 “第2章第4節第4項 DLTS法”株式会社テクノシステム、2013年
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(in Japanese)
加藤 正史(解説記事)
「シリコンカーバイドの太陽光吸収を利用した水素生成」ケミカルエンジニヤリング(化学工業社)、58巻 10号 7-11頁