Publications in 2011
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K. Yang and M. Ichimura,
"Fabrication of Transparent p-Type CuxZnyS Thin Films by the Electrochemical Deposition Method"
Jpn. J. Appl. Phys., Vol.50, 040202 (2011).
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M. Ichimura and Y. Song,
"Band Alignment at the Cu2O/ZnO Heterojunction"
Jpn. J. Appl. Phys., Vol.50 051002 (2011).
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T. Sugiyama, I. Ohwada, T. Nanataki, O. Eryu, M. Ichimura, and M. Gomi,
"Characteristics of Ferroelectric Electron Emitters with Three-dimensional Emission Sites Formed by Chemical Etching",
J. Vac. Sci. Technol. B Vol.92, 032210 (2011).
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M. Muhibbullah and M. Ichimura
"Fabrication of Heterojunctions Based on Chemically Deposited Copper Oxide Thin Films for Solar Cell Application"
Trans. Mater. Res. Soc. Jpn., Vol.36, 195-198 (2011)
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"A diffraction-based technique for determination of interband absorption coefficients in bulk 3C-, 4H- and 6H-SiC crystals"
Patrik Scajev, Masashi Kato, and Kestutis Jarasiunas
J. Phys. D: Appl. Phys. 44 (2011) 365402-1-8
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"Electrical parameters of bulk 3C-SiC crystals determined by Hall effect, magnetoresistivity, and contactless time-resolved optical techniques"
P. Ščajev, A. Mekys, P. Malinovskis, J. Storasta, M. Kato, and K. Jarašiūnas
Materials Science Forum Vols. 679-680 (2011) pp 157-160
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"Improvement of Schottky contact characteristics by anodic oxidation of 4H-SiC"
Masaya Kimura, Masashi Kato and Masaya Ichimura
Materials Science Forum Vols. 679-680 (2011) pp 461-464
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"Active Noise Control in a Duct by an Analog Neural Network Circuit"
Masashi Kato
Applied Acoustics, Vol.72 No.10 pp.732-736 (2011)
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"Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO"
Masashi Kato, Hidenori Ono, Masaya Ichimura, Gan Feng, and Tsunenobu Kimoto
Japanese Journal of Applied Physics Vol. 50, No. 3, 036603-1-4 (2011)
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(in Japanese)
"電気電子工学系大学生の入学動機の時系列変化および大学間における相違の調査"
加藤正史、平田晃正、大原繁男、江龍修、丸田章博
電気学会論文誌A 基礎・材料・共通部門誌 Vol. 131, No.8, pp.635-636 (2011)