Publications in 2011-2015
- W. Bao and M. Ichimura
Influence of Secondary Phases in Kesterite-Cu2ZnSnS4 Absorber Material Based on the First-Principles Calculation
Int. J. Photoenergy, Vol.2015, 592079 (2015). Jan.
- M. Ichimura and S. Kawai,
Band alignment at the CdS/FeS2 interface based on the first-principles calculation
Jpn. J. Appl. Phys., Vol.54, 038002 (2015). March
- M. Ichimura and Y. Maeda
Heterojunctions Based on Photochemically Deposited CuxZnyS and Electrochemically Deposited ZnO
Solid St. Electron., Vol.107, 8-10, (2015). May
- M. Ichimura and Y. Maeda
Fabrication of transparent CuxZnyS/ZnS heterojunction diodes by photochemical deposition
Physica Status Solidi (c), Vol.12, 504-507 (2015). June
- A. Supee, Y. Tanaka, and M. Ichimura
Effects of Complexing Agents on Three Steps Pulse Electrodeposited SnS Thin Films
Mater. Sci. Semicond. Processing, Vol.38, 290-297 (2015). Oct
- M. Ichimura and Y. Maeda
Conduction type of nonstoichiometric alloy semiconductor CuxZnyS deposited by the photochemical deposition method
Thin Solid Films, Vol.594, pp.277-281 (2015) Nov.
- J. J. M. Vequizo, C. Zhang, and M. Ichimura
Fabrication of Cu2O/Fe-O heterojunction solar cells by electrodeposition
Thin Solid Films Vol.597, pp. 83?87 (2015) Dec
- (in Japanese)
市村正也
「真空技術超入門」
Journal of the Vacuum Society of Japan, Vol. 58, 273-281 (2015) Aug.
- Subacius Liudvikas, Jarasiunas Kestutis, Scajev Patrik, Kato Masashi
"Development of a microwave photoconductance measurement technique for study of carrier dynamics in highly-excited 4H-SiC"
Measurement Science and Technology 26 (2015) 125014.
http://dx.doi.org/10.1088/0957-0233/26/12/125014
- Masashi Kato, Kimihiro Kohama, Yoshihito Ichikawa, and Masaya Ichimura,
"Carrier lifetime measurements on various crystal faces of rutile TiO2 single crystals"
Materials Letters 160 (2015) 397-399
http://dx.doi.org/10.1016/j.matlet.2015.08.018
- Naoto Ichikawa, Masashi Kato, and Masaya Ichimura,
"Photocathode for hydrogen generation using 3C-SiC epilayer grown on vicinal off-angle 4H-SiC substrate"
Applied Physics Express 8, 091301 (2015).
http://dx.doi.org/10.7567/APEX.8.091301
- Masashi Kato, Yuto Mori, and Masaya Ichimura,
"Microwave reflectivity from 4H-SiC under a high-injection condition: impacts of electron - hole scattering"
Japanese Journal of Applied Physics 54, 04DP14 (2015)
http://dx.doi.org/10.7567/JJAP.54.04DP14
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S. Kawai, R. Yamazaki, S. Sobue, E. Okuno, and M. Ichimura
Electrochemical deposition of iron sulfide thin films and heterojunction diodes with zinc oxide
APL Matter., Vol.2, 032108 (2014).
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J. J. M. Vequizo and M. Ichimura
Fabrication of Cu2O/γ-FeOOH heterojunction solar cells by electrodeposition
Appl. Phys. Express, Vol.7, 045501 (2014).
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A.M. Abdel Haleem and M. Ichimura
Electrochemical deposition of aluminum oxide thin films from aqueous baths
Materials Letters, Vol.130, pp.26--28 (2014).
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K. Yang, S. Kawai, and M. Ichimura
Electrochemical Deposition of Fe-S-O Thin Films
Thin Solid Films, Vol.573 pp.1--5 (2014).
- (in Japanese)
加藤 正史、久保 真奈美、谷口 淳紀,ナラサンビ アヌスヤ
解説記事「ハウリングを高速応答のアナログ回路で除去」
日経エレクトロニクス(日経BP社)、2014年10月13日号 65-71頁
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Manami Kubo, Junki Taniguchi, Masashi Kato,
Howling Reduction by Analog Phase-Locked Loop and Active Noise Control Circuits
Applied Acoustics 87C (2015) pp. 174-182.
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Yuto Mori, Masashi Kato, Masaya Ichimura,
Surface recombination velocities for n-type 4H-SiC treated by various processes
Journal of Physics D: Applied Physics 47 (2014) 335102 http://dx.doi.org/10.1088/0022-3727/47/33/335102
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Masashi Kato, Tomonari Yasuda, Keiko Miyake, Masaya Ichimura, Tomoaki Hatayama,
Epitaxial p-type SiC as a self-driven photocathode for water splitting
International Journal of Hydrogen Energy 39 (2014) 4845-4849 http://dx.doi.org/10.1016/j.ijhydene.2014.01.049
- (in Japanese)
加藤正史
解説記事「世界初!「SiCと水から水素を製造!」」
マテリアルステージ(技術情報協会)、2014年2月号 64-66頁
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Masashi Kato, Kazuki Yoshihara, Masaya Ichimura, Tomoaki Hatayama, Takeshi Ohshima,
Observation of deep levels and their hole capture behavior in p-type 4H-SiC epilayers with and without electron irradiation
Japanese Journal of Applied Physics 53 (2014) 04EP09.
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Hiroki Nakane, Masashi Kato, Masaya Ichimura, Takeshi Ohshima,
Identification of structures of the deep levels in 4H-SiC
Materials Science Forum 778-780 (2014) pp.277-280
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Keiko Miyake, Tomonari Yasuda, Masashi Kato, Masaya Ichimura, Tomoaki Hatayama, Takeshi Ohshima,
Impact of carrier lifetime on efficiency of photolytic hydrogen generation by p-type SiC
Materials Science Forum 778-780 (2014) pp.503-506
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Yuto Mori, Masashi Kato, Masaya Ichimura,
Estimation of surface recombination velocities for n-type 4H-SiC surfaces treated by various processes
Materials Science Forum 778-780 (2014) pp.432-435
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Masashi Kato, Yuto Mori, Masaya Ichimura,
Correlation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiC
Materials Science Forum 778-780 (2014) pp.293-296
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(in Japanese)
オドンボリル、森口、市村
光化学堆積SnO2薄膜を用いた携帯式水素検出器の試作
電気学会論文誌A、Vol. 133, pp.28-29 (2013).
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Y. Song and M. Ichimura,
H2O2 treatment of electrochemically deposited Cu2O thin films for enhancing
optical absorption
Int. J. Photoenergy, Vol.2013, 738063 (2013).
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F. Rahman, J. Podder, and M. Ichimura
Structural, Optical, and Electrical Characterization of Spray Pyrolysed
Indium Sulfide Thin Films
Surface Review and Letters, Vol. 20, 1350014 (2013).
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M. Kato, M. Kimura, and M. Ichimura
Leakage Current Suppression by Passivation of Defects by Anodic Oxidation of
4H-SiC Schottky Contacts
Jpn. J. Appl. Phys., 52, 04CP02, (2013).
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A. Fukuda and M. Ichimura
Heterostructure Solar Cells Based on Sol-Gel Deposited SnO2 and
Electrochemically Deposited Cu2O
Mater. Sci. Appl. Vol.4, No.6A, pp.1-4 (2013).
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Wujisiguleng Bao and M. Ichimura
Band Offsets at the ZnO/Cu2ZnSnS4 Interface Based on the First Principles
Calculation
Jpn. J. Appl. Phys., Vol.52, 061203 (2013).
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M. Ichimura and Y. Kato
Fabrication of TiO2/Cu2O heterojunction solar cells by electrophoretic
deposition and electrodeposition
Mater. Sci. Semicond. Processing, Vol. 16, pp.1538・541 (2013).
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J. J. M. Vequizo and M. Ichimura
Electrodeposition of Ga-O Thin Films from Aqueous Gallium Sulfate Solutions
Jpn. J. Appl. Phys., Vol.52, 075503 (2013).
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M. Kato, A. Yoshida, M. Ichimura, H. Nagasawa
Excess carrier lifetime and strain distributions in a 3C-SiC wafer grown on
an undulant Si substrate
Physica Status Solidi A 210, pp.1719・725 (2013).
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M. Ichimura, H. Sakakibara, K. Wada, and M. Kato
Efficiency of a solar cell with intermediate energy levels: An example study
on hydrogen implanted Si solar cells
J. Appl. Phys. Vol.114, 114505 (2013).
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J. J. M. Vequizo and M. Ichimura
Electrodeposition and Characterization of γ-FeOOH Thin Films from
Oxygen-Bubbled Aqueous Iron Sulfate Solutions
Appl. Phys. Express Vol.6, 125501 (2013).
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T. Hyodo, G. Asakura, K. Tsukada, and M. Kato
Performance improvement of the analog ANC circuit for a duct by insertion of an all-pass filter
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Vol.E96-A No.4 (2013) pp.824-825
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Kazuki YOSHIHARA, Masashi KATO, Masaya ICHIMURA, Tomoaki HATAYAMA, Takeshi OHSHIMA
Deep levels in p-type 4H-SiC induced by low-energy electron irradiation
Materials Science Forum Vols. 740-742 (2013) pp. 373-376.
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Tomonari Yasuda, Masashi Kato, Masaya Ichimura, Tomoaki Hatayama
Solar-to-hydrogen conversion efficiency of water photolysis with epitaxially grown p-type SiC
Materials Science Forum Vols. 740-742 (2013) pp. 859-862.
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(in Japanese)
加藤 正史(分担執筆)
「書籍「薄膜の評価技術ハンドブック」 “第2章第4節第4項 DLTS法”株式会社テクノシステム、2013年
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(in Japanese)
加藤 正史(解説記事)
「シリコンカーバイドの太陽光吸収を利用した水素生成」ケミカルエンジニヤリング(化学工業社)、58巻 10号 7-11頁
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A. R. Zainun, T. Sakamoto, U. M. Noor, M. Rusop, M. Ichimura,
"New approach for generating Cu2O/TiO2 composite films for solar cell applications"
Mater. Lett., Vol. 66, 254-256 (2012)
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K. M. A. Hussain, J. Podder, D. K. Saha, and M. Ichimura
"Structural, electrical and optical characterization of CuInS2 thin films deposited by spray pyrolysis"
Indian J. Pure Appl. Phys., Vol.50, pp.117-122 (2012)
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K. Yang, Y. Nakashima, and M. Ichimura,
"Electrochemical Deposition of CuxS and CuxZnyS Thin Films with p-Type Conduction and Photosensitivity"
J. Electrochem. Soc., Vol.159, pp.H250-H254 (2012)
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Y. Nakashima and M. Ichimura
"Electrochemical deposition of CuxSnySzO thin films and their application for heterojunction solar cells"
Int. J. Photoenergy, Vol.2012, 171432 (2012)
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Dengbaoleer Ao and M. Ichimura,
"UV irradiation effects on hydrogen sensors based on SnO2 thin films fabricated by the photochemical deposition"
Solid St. Electron. Vol.69, pp.1-3 (2012)
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M. Muhibbullah and M. Ichimura
"Fabrication of Copper Oxide Thin Films by the Drop Chemical Deposition Technique"
Mater. Res. Bull., Vol.47, pp.1968?1972 (2012)
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K. Yang and M. Ichimura
"Fabrication of Cu?Zn?Sn?S?O Thin Films by the Electrochemical Deposition Method and Application to Heterojunction Cells"
Int. J. Photoenergy, Vol.2012, 154704 (2012)
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Dengbaoleer Ao and M. Ichimura
"Deposition and characterization of Sb and Cu doped nanocrystalline SnO2 thin films fabricated by the photochemical method"
J. Non-Crystalline Solids, Vol.358, pp.2470?2473 (2012)
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Dengbaoleer Ao and M. Ichimura
“Deposition of Fe doped nanocrystalline SnO2 thin films by the photochemical deposition method”
Trans. Mater. Res. Soc. Jpn., Vol.37, pp.377-380 (2012)
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Wujisiguleng Bao and M. Ichimura
"Prediction of the Band Offsets at the CdS/Cu2ZnSnS4 Interface Based on the First-Principles Calculation"
Jpn. J. Appl. Phys., Vol.51, 10NC31 (2012)
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J. J. M. Vequizo and M. Ichimura
"Fabrication of Electrodeposited SnS/SnO2 Heterojunction Solar Cells"
Jpn. J. Appl. Phys., Vol.51, 10NC38 (2012)
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Y. Song and M. Ichimura
"Improvement of Electrochemically Deposited Cu2O/ZnO Heterojunction Solar Cells by Modulation of Deposition Current"
Jpn. J. Appl. Phys., Vol.51, 10NC39 (2012)
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Mandula, K. Yang, and M. Ichimura,
"Photochemical deposition of p-type transparent alloy semiconductor CuxZnyS"
Semicond. Sci. Technol., Vol.27, 125007 (2012)
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A. M. Abdel Haleem, M. Sugiyama, and M. Ichimura
"Sulphurization of the Electrochemically Deposited Indium Sulphide Oxide Thin Film and Its Photovoltaic Applications"
Mater. Sci. Appl., Vol.3, pp.802-806 (2012)
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Wujisiguleng Bao and M. Ichimura
"First Principles Study on Influences of Crystal Structure and Orientation on Band Offsets at the CdS/Cu2ZnSnS4 Interface"
Int. J. Photoenergy, Vol.2012, 619812 (2012)
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"Characterization of Photoelectrochemical Properties of SiC as a Water Splitting Material"
Tomonari Yasuda, Masashi Kato and Masaya Ichimura
Materials Science Forum Vols. 717-720 (2012) pp.585-588.
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"Carrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical Probes"
K. Jara?i?nas, P. ??ajev, T. Malinauskas, M. Kato, E. Ivakin, M. Nesladek, K. Haenen, U. Ozgur, and H. Morkoc
Materials Science Forum Vols. 717-720 (2012) pp.309-312.
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"Correlation between strain and excess carrier lifetime in a 3C-SiC wafer"
Atsushi Yoshida, Masashi Kato, Masaya Ichimura
Materials Science Forum Vols. 717-720 (2012) pp.305-308.
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(in Japanese)
"アンケート調査に基づく高校生を対象とした啓発活動に関する一検討"
平田晃正、加藤正史、江龍修、丸田章博
電気学会論文誌A 基礎・材料・共通部門誌 Vol. 132(2012) No. 12 pp.1124-1125.
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(in Japanese)
"卒業研究記録ノートの導入による卒業研究実施状況および達成度の把握"
加藤正史、江龍修、大原繁男
電気学会論文誌A 基礎・材料・共通部門誌 Vol. 132(2012) No. 12 pp.1122-1123.
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(in Japanese)
"構築型スライドの事前提供と学生指名によるインタラクティブ授業の試み"
加藤正史
電気学会論文誌A 基礎・材料・共通部門誌 Vol. 132(2012) No. 12 pp.1120-1121.
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"On applicability of time-resolved optical techniques for characterization of differently grown 3C-SiC crystals and heterostructures"
P. ??ajev, P. Onufrijevs, G. Manolis, M. Karali?nas, S. Nargelas, N. Jegenyes, J. Lorenzzi, G. Ferro, M. Beshkova, R. Vasiliauskas, M. Syvajarvi, R. Yakimova, M. Kato, and K. Jara?i?nas
Materials Science Forum Vol. 711 (2012) pp 159-163
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(in Japanese)
市村(分担執筆)
「高効率太陽電池-化合物・集光型・量子ドット型・Si・有機系・その他材料-」1章各論7"電気化学堆積法を用いたSnS系ヘテロ接合太陽電池の開発"(NTS、2012)
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(in Japanese)
市村
「太陽電池入門」 (オーム社、2012)
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(in Japanese)
「SiCパワーデバイスの開発と最新動向 -普及に向けたデバイスプロセスと実装技術-」
第3章第4節 “陽極酸化欠陥抑制法によるn型4H-SiCのショットキーダイオードの整流特性改善”
加藤 正史、S&T出版、(2012)、pp.159-169.
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K. Yang and M. Ichimura,
"Fabrication of Transparent p-Type CuxZnyS Thin Films by the Electrochemical Deposition Method"
Jpn. J. Appl. Phys., Vol.50, 040202 (2011).
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M. Ichimura and Y. Song,
"Band Alignment at the Cu2O/ZnO Heterojunction"
Jpn. J. Appl. Phys., Vol.50 051002 (2011).
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T. Sugiyama, I. Ohwada, T. Nanataki, O. Eryu, M. Ichimura, and M. Gomi,
"Characteristics of Ferroelectric Electron Emitters with Three-dimensional Emission Sites Formed by Chemical Etching",
J. Vac. Sci. Technol. B Vol.92, 032210 (2011).
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M. Muhibbullah and M. Ichimura
"Fabrication of Heterojunctions Based on Chemically Deposited Copper Oxide Thin Films for Solar Cell Application"
Trans. Mater. Res. Soc. Jpn., Vol.36, 195-198 (2011)
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"A diffraction-based technique for determination of interband absorption coefficients in bulk 3C-, 4H- and 6H-SiC crystals"
Patrik Scajev, Masashi Kato, and Kestutis Jarasiunas
J. Phys. D: Appl. Phys. 44 (2011) 365402-1-8
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"Electrical parameters of bulk 3C-SiC crystals determined by Hall effect, magnetoresistivity, and contactless time-resolved optical techniques"
P. ??ajev, A. Mekys, P. Malinovskis, J. Storasta, M. Kato, and K. Jara?i?nas
Materials Science Forum Vols. 679-680 (2011) pp 157-160
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"Improvement of Schottky contact characteristics by anodic oxidation of 4H-SiC"
Masaya Kimura, Masashi Kato and Masaya Ichimura
Materials Science Forum Vols. 679-680 (2011) pp 461-464
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"Active Noise Control in a Duct by an Analog Neural Network Circuit"
Masashi Kato
Applied Acoustics, Vol.72 No.10 pp.732-736 (2011)
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"Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO"
Masashi Kato, Hidenori Ono, Masaya Ichimura, Gan Feng, and Tsunenobu Kimoto
Japanese Journal of Applied Physics Vol. 50, No. 3, 036603-1-4 (2011)
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(in Japanese)
"電気電子工学系大学生の入学動機の時系列変化および大学間における相違の調査"
加藤正史、平田晃正、大原繁男、江龍修、丸田章博
電気学会論文誌A 基礎・材料・共通部門誌 Vol. 131, No.8, pp.635-636 (2011)