Publications in 2010
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A. M. Abdel Haleem and M. Ichimura
“Experimental determination of band offsets at the SnS/CdS and SnS/InSxOy
heterojunctions”
J. Appl. Phys. Vol.107, 034507 (2010) Feb.
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M. Ichimura and K. Akita
“Deposition of ZnS1-xOx thin films by the photochemical dip coating method
and application for heterojunction solar cells”
Phys. Status Solidi C Vol.7, pp.929-932 (2010) Mar.
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M. Ichimura, Aodengbaoleer, and T. Sueyoshi
“Properties of gas sensors based on photochemically deposited
nanocrystalline SnO2 films”
Phys. Status Solidi C Vol.7, pp.1168-1171 (2010) Mar.
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T. Sugiyama, I. Ohwada, T. Nanataki, O. Eryu, M. Ichimura, and M. Gomi
“Improved emission of ferroelectric electron emitter by surface treatments
in gas atmosphere”
J. Appl. Phys., Vol.107, 114109 (2010) June.
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S. Chowdhury and M. Ichimura
“Photochemical Deposition of GaSxOy Thin Films from Aqueous Solutions”,
Jpn. J. Appl. Phys., Vol.49, 062302 (2010) June.
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M. Muhibbullah and M. Ichimura
“Fabrication of Photoconductive Copper Oxide Thin Films by the Chemical
Bath Deposition Technique”
Jpn. J. Appl. Phys., Vol.49, 081102 (2010) Aug.
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M. Kato, K. Kito, and M. Ichimura,
“Deep levels affecting the resistivity in semi-insulating 6H-SiC”
J. Appl. Phys., Vol.108, 053718 (2010) Sept.
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F. Kang, and M. Ichimura
“Pulsed electrodeposition of oxygen-free tin monosulfide thin films using
lactic acid/sodium lactate buffered electrolytes”
Thin Solid Films, Vol.519, pp.725-728 (2010) Oct.
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J. M. Vequizo, J. Wang, and M. Ichimura,
“Electrodeposition of SnO2 Thin Films from Aqueous Tin Sulfate Solutions”,
Jpn. J. Appl. Phys., Vol.49, 125502 (2010) Dec
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Book (in japanese)
「SiCパワーデバイス最新技術 =次世代パワーエレクトロニクス=」
加藤正史 第12章.SiCへの金属電極の形成方法、サイエンス&テクノロジー株式会社、(2010) pp.159-168
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M. Kato, H. Ono and M. Ichimura
"Correlation between Schottky contact characteristics and regions with a low barrier height revealed by the electrochemical deposition on 4H-SiC”
Materials Science Forum Vols. 645-648 (2010) pp 669-672
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K. Jarašiūnas, P. Ščajev, V. Gudelis, P. B. Klein, and M. Kato
"Nonequilibrium carrier recombination in highly excited bulk SiC crystals"
Materials Science Forum Vols. 645-648 (2010) pp 215-218
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Yoshinori MATSUSHITA, Masashi KATO, Masaya ICHIMURA, Tomoaki HATAYAMA and Takeshi OHSHIMA
"Characterization of the excess carrier lifetime of as-grown and electron irradiated epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method"
Materials Science Forum Vols. 645-648 (2010) pp 207-210
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(in Japanese)
大原繁男、森田良文、平田晃正、加藤正史、江龍修
“学習・教育目標を利用した要素別GPA分析による学修指導の試み“
電気学会論文誌A 基礎・材料・共通部門誌 Vol.130 No.1 (2010) p.123-124.
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V. Grivickas, G. Manolis, K. Gulbinas, J. Linnros, M. Kato
”Internal Stresses in Free-Standing 3C-SiC Grown on Si and Their Relation to Carrier Lifetime”
AIP Conf. Proc. -- November 1, 2010 -- Volume 1292, pp. 91-94