<html> <head> <title>Publications '10</title> <META HTTP-EQUIV="Content-Type" CONTENT="text/html;CHARSET=unicode"> </head> <body bgcolor="white" link="navy" vlink="gray"> <font size="5"><center>Publications in 2010</center></font> <basefont size="4"> <ul> <li> A. M. Abdel Haleem and M. Ichimura<br>  Experimental determination of band offsets at the SnS/CdS and SnS/InSxOy heterojunctions <br> J. Appl. Phys. Vol.107, 034507 (2010) Feb.<br><br> <li> M. Ichimura and K. Akita<br>  Deposition of ZnS1-xOx thin films by the photochemical dip coating method and application for heterojunction solar cells <br> Phys. Status Solidi C Vol.7, pp.929-932 (2010) Mar.<br><br> <li> M. Ichimura, Aodengbaoleer, and T. Sueyoshi<br>  Properties of gas sensors based on photochemically deposited nanocrystalline SnO2 films <br> Phys. Status Solidi C Vol.7, pp.1168-1171 (2010) Mar.<br><br> <li> T. Sugiyama, I. Ohwada, T. Nanataki, O. Eryu, M. Ichimura, and M. Gomi<br>  Improved emission of ferroelectric electron emitter by surface treatments in gas atmosphere <br> J. Appl. Phys., Vol.107, 114109 (2010) June.<br><br> <li> S. Chowdhury and M. Ichimura<br>  Photochemical Deposition of GaSxOy Thin Films from Aqueous Solutions ,<br> Jpn. J. Appl. Phys., Vol.49, 062302 (2010) June.<br><br> <li> M. Muhibbullah and M. Ichimura<br>  Fabrication of Photoconductive Copper Oxide Thin Films by the Chemical Bath Deposition Technique <br> Jpn. J. Appl. Phys., Vol.49, 081102 (2010) Aug.<br><br> <li> M. Kato, K. Kito, and M. Ichimura,<br>  Deep levels affecting the resistivity in semi-insulating 6H-SiC <br> J. Appl. Phys., Vol.108, 053718 (2010) Sept.<br><br> <li> F. Kang, and M. Ichimura<br>  Pulsed electrodeposition of oxygen-free tin monosulfide thin films using lactic acid/sodium lactate buffered electrolytes <br> Thin Solid Films, Vol.519, pp.725-728 (2010) Oct.<br><br> <li> J. M. Vequizo, J. Wang, and M. Ichimura,<br>  Electrodeposition of SnO2 Thin Films from Aqueous Tin Sulfate Solutions ,<br> Jpn. J. Appl. Phys., Vol.49, 125502 (2010) Dec <br><br> <li> Book (in japanese)<br> 03I#0000000gebS0!kNN00000000000 0<br> RckS0,{12z3I#x0n0ё^\uin0b_bel000000000000*h_O>y0(2010)0pp.159-168<br><br> <li> M. Kato, H. Ono and M. Ichimura "Correlation between Schottky contact characteristics and regions with a low barrier height revealed by the electrochemical deposition on 4H-SiC <br> Materials Science Forum Vols. 645-648 (2010) pp 669-672<br><br> <li> K. Jaraaiknas, P. ` ajev, V. Gudelis, P. B. Klein, and M. Kato<br> "Nonequilibrium carrier recombination in highly excited bulk SiC crystals"<br> Materials Science Forum Vols. 645-648 (2010) pp 215-218<br><br> <li> Yoshinori MATSUSHITA, Masashi KATO, Masaya ICHIMURA, Tomoaki HATAYAMA and Takeshi OHSHIMA<br> "Characterization of the excess carrier lifetime of as-grown and electron irradiated epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method"<br> Materials Science Forum Vols. 645-648 (2010) pp 207-210<br><br> <li> (in Japanese)<br> 'YSA~7u0h0uoe0s^0uCfck0RckS0_lO<br>  f[0Yevj0)R(uW0_0 }%RGPARgk000f[Oc\n0f0 <br> lf[O֊e!0Wy0Pge0qQ萀 Vol.130 No.1 (2010) p.123-124.<br><br> <li> V. Grivickas, G. Manolis, K. Gulbinas, J. Linnros, M. Kato<br>  Internal Stresses in Free-Standing 3C-SiC Grown on Si and Their Relation to Carrier Lifetime <br> AIP Conf. Proc. -- November 1, 2010 -- Volume 1292, pp. 91-94 <br><br> </ul> </body> <script src="http://www.google-analytics.com/urchin.js" type="text/javascript"> </script> <script type="text/javascript"> _uacct = "UA-848354-1"; urchinTracker(); </script> </html>