Publications in 2009
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M. Ichimura and T. Sueyoshi,
"Room Temperature Gas Sensor with a High Sensitivity to Hydrogen Based on SnO2 Films Prepared by Photochemical Techniques"
Jpn. J. Appl. Phys. Vol.48, 015503 (2009) Jan.
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M. Ichimura
"Calculation of Band offsets at the CdS/SnS heterojunction"
Solar Energy Mater. Solar Cells, Vol.93, pp.375-378 (2009) Jan.
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H. Rezagholipour Dizaji and M. Ichimura
"Photochemical deposition of FeSxOy"
Mater. Sci. Eng. B, Vol.158 pp.26-29 (2009) March.
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A. M. Abdel Haleem and M. Ichimura
"Wide Bandgap InS-based Thin Film: Deposition, Characterization, and Application for SnS Solar Cells "
Jpn. J. Appl. Phys. Vol.48, 035506 (2009) March.
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S. Chowdhury and M. Ichimura
"Electrochemical Deposition of GaSxOy Thin Films"
Jpn. J. Appl. Phys. Vol.48, 061101 (2009) June.
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M. Ichimura and Y. Nakashima
"Analysis of Atomic and Electronic Structures of Cu2ZnSnS4 Based on First-Principle Calculation"
Jpn. J. Appl. Phys. Vol.48, 090202 (2009) Sept.
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A.M. Abdel Haleem and M. Ichimura
"Electrodeposition of wide band gap InGaxSyOz thin films for solar cell applications"
Mater. Sci. Eng. B, Vol.164, pp.180-185 (2009) Oct.
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A.M. Abdel Haleem, M. Kato, and M. Ichimura,
"Annealing Study of the electrochemically deposited InSxOy Thin Film and its Photovoltaic Application"
IEICE Transactions on Electronics, Vol. E92-C, pp.1464-1469 (2009) Dec.
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Vytautas Grivickas, Georgios Manolis, Karolis Gulbinas, Kestutis Jarasiunas, and Masashi Kato
"Excess carrier recombination lifetime of bulk n-type 3C-SiC"
APPLIED PHYSICS LETTERS 95, p.242110, 2009
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Masashi Kato, Kosuke Kito and Masaya Ichimura
"Characterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient Spectroscopy"
Materials Science Forum Vols. 615-617 (2009) pp 381-384
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Masashi Kato, Kazuya Ogawa and Masaya Ichimura
"Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition"
Materials Science Forum Vols. 600-603 (2009) pp 373-376