Publications in 2006-2010
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A. M. Abdel Haleem and M. Ichimura
“Experimental determination of band offsets at the SnS/CdS and SnS/InSxOy
heterojunctions”
J. Appl. Phys. Vol.107, 034507 (2010) Feb.
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M. Ichimura and K. Akita
“Deposition of ZnS1-xOx thin films by the photochemical dip coating method
and application for heterojunction solar cells”
Phys. Status Solidi C Vol.7, pp.929-932 (2010) Mar.
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M. Ichimura, Aodengbaoleer, and T. Sueyoshi
“Properties of gas sensors based on photochemically deposited
nanocrystalline SnO2 films”
Phys. Status Solidi C Vol.7, pp.1168-1171 (2010) Mar.
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T. Sugiyama, I. Ohwada, T. Nanataki, O. Eryu, M. Ichimura, and M. Gomi
“Improved emission of ferroelectric electron emitter by surface treatments
in gas atmosphere”
J. Appl. Phys., Vol.107, 114109 (2010) June.
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S. Chowdhury and M. Ichimura
“Photochemical Deposition of GaSxOy Thin Films from Aqueous Solutions”,
Jpn. J. Appl. Phys., Vol.49, 062302 (2010) June.
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M. Muhibbullah and M. Ichimura
“Fabrication of Photoconductive Copper Oxide Thin Films by the Chemical
Bath Deposition Technique”
Jpn. J. Appl. Phys., Vol.49, 081102 (2010) Aug.
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M. Kato, K. Kito, and M. Ichimura,
“Deep levels affecting the resistivity in semi-insulating 6H-SiC”
J. Appl. Phys., Vol.108, 053718 (2010) Sept.
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F. Kang, and M. Ichimura
“Pulsed electrodeposition of oxygen-free tin monosulfide thin films using
lactic acid/sodium lactate buffered electrolytes”
Thin Solid Films, Vol.519, pp.725-728 (2010) Oct.
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J. M. Vequizo, J. Wang, and M. Ichimura,
“Electrodeposition of SnO2 Thin Films from Aqueous Tin Sulfate Solutions”,
Jpn. J. Appl. Phys., Vol.49, 125502 (2010) Dec
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Book (in japanese)
「SiCパワーデバイス最新技術 =次世代パワーエレクトロニクス=」
加藤正史 第12章.SiCへの金属電極の形成方法、サイエンス&テクノロジー株式会社、(2010) pp.159-168
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M. Kato, H. Ono and M. Ichimura
"Correlation between Schottky contact characteristics and regions with a low barrier height revealed by the electrochemical deposition on 4H-SiC”
Materials Science Forum Vols. 645-648 (2010) pp 669-672
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K. Jarasiuas, P. Scajev, V. Gudelis, P. B. Klein, and M. Kato
"Nonequilibrium carrier recombination in highly excited bulk SiC crystals"
Materials Science Forum Vols. 645-648 (2010) pp 215-218
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Yoshinori MATSUSHITA, Masashi KATO, Masaya ICHIMURA, Tomoaki HATAYAMA and Takeshi OHSHIMA
"Characterization of the excess carrier lifetime of as-grown and electron irradiated epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method"
Materials Science Forum Vols. 645-648 (2010) pp 207-210
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(in Japanese)
大原繁男、森田良文、平田晃正、加藤正史、江龍修
“学習・教育目標を利用した要素別GPA分析による学修指導の試み“
電気学会論文誌A 基礎・材料・共通部門誌 Vol.130 No.1 (2010) p.123-124.
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V. Grivickas, G. Manolis, K. Gulbinas, J. Linnros, M. Kato
”Internal Stresses in Free-Standing 3C-SiC Grown on Si and Their Relation to Carrier Lifetime”
AIP Conf. Proc. -- November 1, 2010 -- Volume 1292, pp. 91-94
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M. Ichimura and T. Sueyoshi,
"Room Temperature Gas Sensor with a High Sensitivity to Hydrogen Based on SnO2 Films Prepared by Photochemical Techniques"
Jpn. J. Appl. Phys. Vol.48, 015503 (2009) Jan.
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M. Ichimura
"Calculation of Band offsets at the CdS/SnS heterojunction"
Solar Energy Mater. Solar Cells, Vol.93, pp.375-378 (2009) Jan.
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H. Rezagholipour Dizaji and M. Ichimura
"Photochemical deposition of FeSxOy"
Mater. Sci. Eng. B, Vol.158 pp.26-29 (2009) March.
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A. M. Abdel Haleem and M. Ichimura
"Wide Bandgap InS-based Thin Film: Deposition, Characterization, and Application for SnS Solar Cells "
Jpn. J. Appl. Phys. Vol.48, 035506 (2009) March.
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S. Chowdhury and M. Ichimura
"Electrochemical Deposition of GaSxOy Thin Films"
Jpn. J. Appl. Phys. Vol.48, 061101 (2009) June.
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M. Ichimura and Y. Nakashima
"Analysis of Atomic and Electronic Structures of Cu2ZnSnS4 Based on First-Principle Calculation"
Jpn. J. Appl. Phys. Vol.48, 090202 (2009) Sept.
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A.M. Abdel Haleem and M. Ichimura
"Electrodeposition of wide band gap InGaxSyOz thin films for solar cell applications"
Mater. Sci. Eng. B, Vol.164, pp.180-185 (2009) Oct.
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A.M. Abdel Haleem, M. Kato, and M. Ichimura,
"Annealing Study of the electrochemically deposited InSxOy Thin Film and its Photovoltaic Application"
IEICE Transactions on Electronics, Vol. E92-C, pp.1464-1469 (2009) Dec.
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Vytautas Grivickas, Georgios Manolis, Karolis Gulbinas, Kestutis Jarasiunas, and Masashi Kato
"Excess carrier recombination lifetime of bulk n-type 3C-SiC"
APPLIED PHYSICS LETTERS 95, p.242110, 2009
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Masashi Kato, Kosuke Kito and Masaya Ichimura
"Characterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient Spectroscopy"
Materials Science Forum Vols. 615-617 (2009) pp 381-384
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Masashi Kato, Kazuya Ogawa and Masaya Ichimura
"Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition"
Materials Science Forum Vols. 600-603 (2009) pp 373-376
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Masashi Kato, Kazuki Mikamo, Masaya Ichimura, Masakazu Kanechika ,Osamu Ishiguro, Tetsu Kachi
"Characterization of plasma etching damage on p-type GaN using Schottky diodes"
Journal of Applied Physics, Vol. 103 (2008 May) p.093701
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Masashi KATO, Nobuyuki TERADA, Hirofumi OHATA, and Eisuke ARAI
"Low-Power Switched Current Memory Cell with CMOS-type Configuration"
IEICE TRANS. ELECTRON., Vol. E91-C, No.1, pp. 120-121, Jan. 2008.
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A. Senthil Kumaran and M. Ichimura,
"Direct Fabrication of Fine Gold Patterns from an Aqueous Solution by a UV Laser"
J. Electron. Mater., Vol.37, pp. 523-526 (2008) April.
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A.M. Abdel Haleem, and M. Ichimura,
"Electrochemical deposition of indium sulfide thin films using two-step pulse biasing"
Thin Solid Films, Vol.516, pp.7783-7789 (2008) Aug.
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M. Azuma and M. Ichimura
"Fabrication of ZnO thin films by the photochemical deposition method"
Mater. Res. Bull., Vol.43, pp.3537-3542 (2008) Oct.
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M. Ichimura and H. Takagi,
Electrodeposited ZnO/SnS Heterostructures for Solar Cell Application
Jpn. J. Appl. Phys. Vol. 47, pp.7845-7847 (2008) Oct.
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Book (in japanese)
「最新太陽電池技術の徹底検証・今後の展開」
市村正也 分担執筆(情報機構、2008)
- H. Watanabe, M. Kato, M. Ichimura, E. Arai, M. Kanechika, O. Ishiguro, and T. Kachi
"Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method"
Jpn. J. Appl. Phys., Vol. 46, pp. 35-39 (2007) Jan.
- Masahiko Kawai, Tatsuhiro Mori, Masashi Kato, Masaya Ichimura, Shingo Sumie, and Hidehisa Hashizume
"Excess Carrier Lifetimes in a bulk p-type SiC Wafer Measured by the Microwave Photoconductivity Decay Method"
Materials Science Forum, 556-557 (2007) pp. 359-362.
- M. Gunasekaran and M. Ichimura,
"Photovoltaic cells based on pulsed electrochemically deposited SnS and photochemically deposited CdS and Cd1-xZnxS"
Solar Energy Mater. Solar Cells, Vol. 91(9), pp. 774-778 (2007) May
- M. Kato, M. Kawai, T. Mori, M. Ichimura, S. Sumie, and H. Hashizume
"Excess Carrier Lifetime in a Bulk p-type 4H-SiC Wafer Measured by the Microwave Photoconductivity Decay Method"
Jpn. J. Appl. Phys., Vol.46, pp.5057-5061 (2007) Aug.
- T. Miyawaki and M. Ichimura
"Fabrication of ZnS thin films by an improved photochemical deposition method and application to ZnS/SnS heterojunction cells"
Materials Letters, Vol.61 pp.4683-4686 (2007) Sept.
- Masashi Kato, Kazuya Ogawa and Masaya Ichimura
"Observation of Inhomogeneity of Schottky Barrier Height on 4H-SiC Using the Electrochemical Deposition"
Japanese Journal of Applied Physics, Vol. 46, No. 41, 2007 Oct., pp. L997-L999.
- K. Omoto, N. Fathy and M. Ichimura
Deposition of SnSxOy Films by Electrochemical Deposition Using Three-Step Pulse and Their Characterization
Jpn. J. Appl. Phys., Vol. 45, pp.1500-1505 (2006)
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M. Gunasekaran, P. Ramasamy, and M. Ichimura
Optical and Electrical Characterization of Photochemically Deposited CdS and Cd1-xZnxS Alloys
J. Electrochem. Soc., Vol.153, pp.G664-G668 (2006)
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M. Gunasekaran, P. Ramasamy, and M. Ichimura
Preparation of ternary Cd1-xZnxS alloy by photochemical deposition (PCD) and its application to photovoltaic devices
Phys. Stat. Sol. (c) Vol.3, pp.2656-2660 (2006)
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N. Fathy and M. Ichimura
Electrochemical deposition of ZnO thin films from acidic solutions
J. Cryst. Growth, Vol. 294, pp.191-196 (2006)
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D. Ito and M. Ichimura
Room-Temperature Hydrogen Sensing Properties of SnO2 Thin Films Fabricated by the Photochemical Deposition and Doping Methods
Jpn. J. Appl. Phys., Vol. 45, pp.7094-7096 (2006)
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M. Kato, S. Tanaka, M. Ichimura, E. Arai, S. Nakamura T. Kimoto, and R. Passler
Optical cross sections of deep levels in 4H-SiC
J. Appl. Phys., Vol.100, 053708 (2006)
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M. Ichimura
Temperature dependence of a slow component of excess carrier decay curves
Solid St. Electron., Vol. 50, pp. 1761-1766 (2006)
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A. Senthil Kumaran,T. Miyawaki, and M. Ichimura
Photochemical deposition of patterned gold thin films
Jpn. J. Appl. Phys., Vol.45, pp.L1283 - L1285 (2006)