Publications in 2001-2005

• N. Sato, M. Ichimura, E. Arai and Y. Yamazaki
  "Characteriztion of Electrical Properties and Photosensitivity of SnS Thin Films Prepared by the Electrochemical Deposition Method"
  Solar Energy Mater. Solar Cells, Vol.85, No.2, pp 153-165 (2005).
  
  
• J. Podder, R. Kobayashi, and M. Ichimura
  "Photochemical Deposition of Cu_xS Thin Films from Aqueous Solutions"
  Thin Solid Films, Vol.472, pp.71-75 (2005).
  
  
• M. Kato, S. Tanaka, M. Ichimura, E. Arai, S. Nakamura and T. Kimoto
  "Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition"
  Materials Science Forum, 483-485 pp. 381-384 (2005).
  
  
• J. Podder, T. Miyawaki, and M. Ichimura
  "Preparation and Characterization of CuInS₂ Thin Films from Aqueous Solutions by Novel Photochemical Deposition Technique"
  J. Cryst. Growth, Vol.275, pp. e937-e942 (2005).
  
  
• Masashi Kato, Hideki Watanabe, Masaya Ichimura, and Eisuke Arai
  "Excess Carrier Lifetime Measurements for GaN on Sapphire Substrates with Various Doping Concentrations and Surface Conditions by the Microwave Photoconductivity Decay Method"
  Proceedings of Materials Research Society, Volume 831 pp. E3.3 107-111 (2005).
  
  
• N. Fathy and M. Ichimura
  "Photoelectrical Properties of ZnS Thin Films Deposited from Aqueous Solution Using Pulsed Electrochemical Deposition"
  Solar Energy Mater. Solar Cells, Vol 87, No.1-4, pp 747-756 (2005).
  
  
• M. Gunasekaran and M. Ichimura
  "Deposition of Cd_1-xZn_xS (0 < x < 1) Alloys by Photochemical Deposition Technique"
  Jpn. J. Appl. Phys., Vol.44, pp.7345-7350 (2005).
  
  
• N. Fathy and M. Ichimura
  "Electrochemical Deposition of ZnO_1-xS_x Thin Films Using Three-Step Pulse"
  Jpn. J. Appl. Phys., Vol. 44, pp.L1295-L1297 (2005).
  
  
• Tatsuhiro Mori, Masashi Kato, Hideki Watanabe, Masaya Ichimura, Eisuke Arai, Shingo Sumie and Hidehisa Hashizume
  "Excess Carrier Lifetime Measurement of Bulk SiC Wafers and Its Relationship with Structural Defect Distribution"
  Japanese Journal of Applied Physics, Vol.44 pp. 8333-8339 (2005).
  
  
• N. Fathy, R. Kobayashi, M. Ichimura
  "Preparation of ZnS Thin Films by the Pulsed Electrochemical Deposition"
  Mater. Sci. Eng. B, Vol. 107, pp. 271-276 (2004).
  
  
• Y. Shibata, M. Ichimura and E. Arai
  "Conduction type change with annealing in thin silicon-on-insulator wafers"
  Solid-State Electronics, Vol.48, pp. 1249-1252 (2004).
  
  
• M. Kato, M. Ichimura, E. Arai, S. Sumie, and H. Hashizume
  "Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and its Relationship with Structural Defect Distribution"
  Mater. Sci. Forum, Vols.457-460, pp.505-508 (2004).
  
  
• M. Ichimura,R. Kobayashi, and T. Miyawaki
  "Photochemical Deposition of ZnS Thin Films by Intermittent Illumination"
  Jpn. J. Appl. Phys., Vol.43, pp.L1196-1198 (2004)
  
  
• M. Ichimura , K. Shibayama and K. Masui
  "Fabrication of SnO₂ Thin Films by a Photochemical Deposition Method"
  Thin Solid Films, Vol.466/1-2, pp.34-36 (2004).
  
  
• Masashi Kato, Masaya Ichimura and Eisuke Arai
  "Electrochemical oxidation and etching of 6H-SiC"
  Recent. Res. Devel. Electrochem., 7 (2004) pp. 45-70
  
  
• K. Takeuchi, M. Ichimura, E. Arai, and Y. Yamazaki
  "SnS Thin Films Fabricated by Pulsed and Normal Electrochemical Deposition"
  Sol. Energy Mat. Sol. Cells, Vol. 75, (2003) pp.427-432
  
  
• T. Ichino, H. Uchida, M. Ichimura and E. Arai
  "Sb Pile-up at Oxide/Si Interface during Drive-in Diffusion after Predeposition Using Doped Oxide Source"
  Jpn. J. Appl. Phys., Vol.42, (2003) pp.1139-1144
  
  
• M. Kato, M. Ichimura, E. Arai, and P. Ramasamy
  "Etch Pit Observation for 6H-SiC by Electrochemical Etching Using an Aqueous KOH Solution"
  J. Electrochem. Soc., Vol. 150, (2003) pp. C208-C211.
  
  
• E. Arai, D. Iida, H. Asai, Y. Ieki, H. Uchida, and M. Ichimura
  "Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Silicon and Silicon-on-Insulator"
  Jpn. J. Appl. Phys. Vol. 42, (2003) pp. 1503-1510.
  
  
• M. Kato, M. Ichimura, E. Arai and P. Ramasamy
  "Electrochemical Etching of 6H-SiC Using Aqueous KOH Solutions with Low Surface Roughness"
  Jpn. J. Appl. Phys. Vol. 42, (2003) pp. 4233-4236.
  
  
• Y. Shibata, T. Ichino, M. Ichimura and E. Arai
  "As and Sb Diffusion Profiles in Thin Silicon-On-Insulator Wafers"
  Jpn. J. Appl. Phys. Vol. 42, (2003) pp. 4282-4283.
  
  
• T. Kuwayama, M. Ichimura, and E. Arai
  "Interface Recombination Velocity of Silicon-on-Insulator Wafers Measured by Microwave Reflectance Photoconductivity Decay Method with Electric Field"
  Appl. Phys. Lett. Vol.83, (2003) pp. 928-930.
  
  
• Y. Nakakura, M. Kato, M. Ichimura, E. Arai, Y. Tokuda, and S. Nishino
  "Characterization of Deep Levels in 6H-SiC by Optical-Capacitance-Transient Spectroscopy"
  J. Appl. Phys. Vol.94, (2003) pp. 3233-3238.
  
  
• M. Kato, M. Ichimura, E. Arai and Y. Tokuda
  "Deep Level Characterization and its Passivation in 3C-SiC Monitored by Capacitance Transient Methods"
  Defect and Diffusion Forum, 218-220 (2003) pp. 1-16.
  
  
• M. Kato, M. Ichimura, E. Arai and P. Ramasamy
  "Electrochemical etching of n-type 6H-SiC using aqueous KOH solutions"
  Materials Science Forum, 433-436 (2003) pp. 665-668.
  
  
• M. Ichimura, S. Ito, and E. Arai,
  "Changes in Carrier Profiles of Bonded SOI Wafers with Thermal Annealing Measured by the Spreading Resistance Method"
  Solid St. Electron., Vol.46, pp.545-553 (2002).
  
  
• M. Kato, M. Ichimura, and E. Arai,
  "Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic Oxidation"
  Mater. Sci. Forum Vols. 389-393, pp.933-936 (2002).
  
  
• M. Ichimura, A. Tada, E. Arai, H. Takamatsu, and S. Sumie,
  "Bulk Carrier Lifetime Measurement by the Microwave Reflectance Photochonductivity Decay Method with External Surface Electric Field"
  Appl. Phys. Lett., Vol.80, pp.4390-4392 (2002).
  
  
• H. Uchida, M. Ichimura and E. Arai,
  "Boron Diffusion Profiles in Ultrathin Silicon-on-Insulator Structures and Their Relation to Crystalline Quality"
  Jpn. J. Appl. Phys., Vol.41, pp.4436-4441 (2002).
  
  
• R. Kumaresan, M. Ichimura, and E. Arai,
  "Photochemical Deposition of ZnSe Polycrystalline Thin Films and Their Characterization"
  Thin Solid Films, Vol.414, pp. 25-30 (2002).
  
  
• R. Kumaresan, M. Ichimura, N. Sato, P. Ramasamy, and E. Arai,
  "Deposition of Amorphous SexTe1-x Thin Film Alloys by a Novel Photochemical Deposition Technique and Their Analysis"
  J. Electrochem. Soc., Vol.149 (9), pp. C464-C468 (2002).
  
  
• M. Ichimura, N. Sato, A. Nakamura, K. Takeuchi, and E. Arai,
  "Properties of Photochemically Deposited CdSe Films"
  Physica Status Solidi (a), Vol.193, pp.132-138 (2002).
  
  
• R. Kumaresan, M. Ichimura, N. Sato, P. Ramasamy
  "Application of Novel Photochemical Deposition Technique for the Deposition of Indium Sulfide"
  Mater. Sci. Eng. B, Vol.96, pp.37-42 (2002).
  
  
• Y. Nakakura, M. Kato, M. Ichimura, E. Arai, and Y. Tokuda,
  "Characterization of Deep Levels in 3C-SiC by Optical-Capacitance-Transient Spectroscopy"
  Mater. Res. Soc. Symp. Proc., Vol.719, pp.167-171 (2002).
  
  
• M. Kato, M. Ichimura, E. Arai, and S. Nishino,
  "Deep Level Study in Epitaxial 4H-SiC Grown on Substrates Inclined toward <1-100>"
  Mater. Res. Soc. Symp. Proc., Vol.719, pp.457-461 (2002).
  
  
• M. Kato, F. Sobue, M. Ichimura, E. Arai, N. Yamada, Y. Tokuda and T. Okumura,
  "Deep Center Passivation in 3C-SiC by Hydrogen Plasma with a Grid for Damage Suppression"
  Solid St. Electron., Vol.46, pp.2099-2104 (2002).
  
• M. Ichimura, A. Nakamura, K. Takeuchi, and E. Arai,
  "Photochemical Deposition of Se and CdSe from Aqueous Solutions"
  Thin Solid Films, Vol.384, pp.157-159 (2001)
  
  
• M. Kato, F. Sobue, M. Ichimura, E. Arai, N. Yamada, Y. Tokuda, and T. Okumura,
  "Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment"
  Jpn. J. Appl. Phys., Vol.40, pp.2983-2986 (2001).
  
  
• A. Tada, M. Ichimura, E. Arai, H. Takamatsu, and S. Sumie,
  "Characterization of Si Wafer Surfaces after Wet Chemical Treatment by the Microwave Reflectance Photoconductivity Decay Method with Surface Electric Field"
  Jpn. J. Appl. Phys., Vol.40, pp.3069-3074 (2001).
  
  
• R, Kumaresan, M. Ichimura, K. Takahashi, K. Takeuchi, F. Goto, and E. Arai,
  "Electrical and Optical Properties of CdS Films Grown by Photochemical Deposition from Aqueous Solutions"
  Jpn. J. Appl. Phys., Vol.40, pp.3161-3162 (2001).
  
  
• M. Kato, M. Ichimura, E. Arai, Y. Masuda, Y. Chen, S. Nishino, and Y. Tokuda,
  "Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane"
  Jpn. J. Appl. Phys., Vol.40, pp.4943-4947 (2001).
  
  
• M. Kato, M. Ichimura, and E. Arai,
  "Sacrificial Anodic Oxidation of 6H-SiC"
  Jpn. J. Appl. Phys., Vol.40, pp.L1145-L1147 (2001).