Publications until 2000

• H. Uchida, Y. Ieki, M. Ichimura, and E. Arai,
  "Retarded Diffusion of Phosphorus in Silicon-on-Insulator Structures"
  Jpn. J. Appl. Phys., Vol.39, pp.137-140 (2000).
  
  
• R Kumaresan, R. Gopalakrishnan, S. Moorth Babu, P. Ramasamy, P. Zaumseil, and, M Ichimura
  "Quality Assessment of Bridgman Grown CdTe Single Crystals using Double Crystal X-ray Diffractometry (DCD) and Synchrotron Radiation"
  J. Crystal. Growth, Vol.210, pp 193-197 (2000).
  
  
• M. Ichimura, K. Takeuchi, Y. Ono, and E. Arai,
  "Electrochemical Deposition of SnS Thin Films"
  Thin Solid Films, Vol.361-362, pp.98-101 (2000).
  
  
• M. Ichimura, M. Hirano, A. Tada, E. Arai, H. Takamatsu, S. Sumie,
  "Characterization of Si Wafers by micro-PCD with Surface Electric Field"
  Mater. Sci. Eng. B, Vol.73, pp.230-234 (2000).
  
  
• M. Hirano, M. Ichimura, and E. Arai,
  "Slow Decay of Excess Carrier Concentration in Bonded Silicon-on-Insulator Wafers"
  Jpn. J. Appl. Phys., Vol.39, pp.6513-6514 (2000).
  
  
• M. Kato, M. Ichimura, E. Arai, Y. Masuda, Y. Chen, S. Nishino and Y. Tokuda,
  "DLTS Study of 3C-SiC Grown on Si Using Hexamethyldisilane"
  Mater. Res. Soc. Symp. Proc., Vol.622, T4.3 (2000).
• M. Ichimura, F. Goto, Y. Ono, and E. Arai
  "Deposition of CdS and ZnS from Aqueous Solutions by a New Photochemical Technique"
  J. Cryst. Growth, Vol.198-199, pp.308-312 (1999).
  
  
• M. Ichimura, F. Goto, and E. Arai
  "Photochemical Deposition of CdS from Aqueous Solutions"
  J. Electrochem. Soc., Vol.146, pp.1028-1034 (1999).
  
  
• M. Ichimura, M. Hirano, N. Kato, E. Arai, H. Takamatsu, and S. Sumie
  "Control of Surface Recombination of Si Wafers by an External Electrode"
  Jpn. J. Appl. Phys., Vol.38, pp.L292-L294 (1999).
  
  
• M. Ichimura, F. Goto, and E. Arai
  "Structural and Optical Characterization of CdS Films Grown by Photochemical Deposition"
  J. Appl. Phys., Vol. 85, pp.7411-7417 (1999).
  
  
• N. Yamada, M. Kato, M. Ichimura, E. Arai, and Y. Tokuda
  "Search for Midgap Levels in 3C-SiC Grown on Si Substrates"
  Jpn. J. Appl. Phys., Vol.38, pp.L1094-1095 (1999).
  
• F. Goto, K. Shirai, and M. Ichimura,
  "Defect Reduction in Electrochemically Deposited CdS Thin Films by Annealing in O₂"
  Solar Energy Mater. & Solar Cells, Vol. 50, pp.147-153 (1998).
  
  
• M. Ichimura, Y. Koga, N. Yamada, T. Abe, E. Arai, and Y. Tokuda
  "Study of Carrier Emission and Capture Processes at Electron Traps in 3C-SiC"
  Jpn. J. Appl. Phys., Vol.37, pp.L18-L20 (1998).
  
  
• M. Miyazaki, K. Kawai, and M. Ichimura
  "Measurement of Minority Carrier Recombination Lifetime in Silicon Wafers by Measurement of Photoconductivity Decay by Microwave Reflectance: Results of Round Robin Test"
  Recombination Lifetime Measurements in Silicon (Proc. Adv. Workshop on Silicon Recombination lifetime Characterization Methods, 1997), eds. D. C. Gupta, F. R. Bacher, and W. M. Hughes (ASTM, West Conshohocken, 1998) pp.347-366.
  
  
• M. Ichimura, N. Yamada, H. Tajiri, and E. Arai,
  "Slow Photoconductivity Decay in 3C-SiC on Si Substrates"
  J. Appl. Phys., Vol.84, pp.2727-2731 (1998).
  
  
• M. Ichimura, H. Tajiri, T. Ito, and E. Arai,
  "Temperature Dependence of Carrier Recombination Lifetime in Si Wafers"
  J. Electrochem. Soc., Vol.145, pp.3265-3271 (1998).