Wide gap semiconductor related facilities

Optical-capacitance-transinet spectroscopy measurement system

(It also works as DLTS system)

DLTS measurement system

(Capacitance, current and fast-pulse measurement)

Carrier lifetime measurement system

(We have various excitation light source)

Furnace (bigger)

(Maximum temperature 1100oC)

Carrier lifetime mapping system

(100 micron resolution)

Infrared furnace

(Maximum temperature 1600oC)

SiC material, Acheson crystal and sublimation grown crystals

endowed from S. Nishino, Prof. emeritus of Kyoto Inst. of Tech.

Back to list of facilities